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S2000AFI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N).
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
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ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj July 1997 Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature
o
Value 1500 700 10 8 15 50 -65 to 150 150
Unit V V V A A W
o o
C C 1/6
S2000AFI
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO V CEO(sus) V EBO V CE(sat ) V BE(s at) Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Voltage Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage INDUCTIVE LOAD Storage Time Fall T ime Transition F requency Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA I E = 10 mA I C = 4.5 A I C = 4.5 A IB = 2 A IB = 2 A 700 10 1 1.3 T C = 125 C
o
Min.
Typ .
Max. 1 2 100
Un it mA mA A V V V V
ts tf fT
I C = 4.5 A hFE = 2.5 VCC = 140 V L C = 0.9 mH L B = 3 H I C = 0.1 A VCE = 5 V f = 5 MHz
7 0.55 7
s s MHz
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area.
Thermal Impedance
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S2000AFI
DC Current Gain Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Inductive Load (see figure 1)
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S2000AFI
Figure 1: Inductive Load Switching Test Circuit.
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S2000AFI
ISOWATT218 MECHANICAL DATA
DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090
L3 N A E L2 L5 L6 F M U H 1 L1 L4 2 3 G D1 C D
P025C
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S2000AFI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . ..
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